| PART |
Description |
Maker |
| 2SB331 2SB330 2SD331E |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 150MA I(C) | TO-5
NPN/PNP Triple Diffused Planar Silicon Transistors, Low Freq. Power Amp. Applications
|
Sanyo Semiconductor
|
| 2SC5658-HF |
Halogen Free Transistor, V-CBO=60V, V-CEO=50V, V-EBO=7V, I-C=150mA
General Purpose Transistor
|
Comchip Technology
|
| FMY4A |
Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
|
TY Semiconductor Co., Ltd
|
| HN2C01FU HN2C01FUGR |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP 晶体管|晶体管|一对|叩| 50V五（巴西）总裁| 150毫安一c）|的TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Omron Electronics, LLC
TOSHIBA
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| 2SC2812-4 2SC2812-5 2SC2812-6 2SA1179-4 |
晶体管|晶体管|叩| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）| SOT - 23封装
|
HIROSE ELECTRIC Co., Ltd.
|
| 2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA 晶体管|晶体管|进步党| 50V五（巴西）总裁| 3A条一（c）|52AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SIP
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
HIROSE ELECTRIC Co., Ltd.
ROHM
|
| EN7177B CPH5905 CPH5905H-TL-E CPH5905G-TL-E |
N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type, CPH5
|
ON Semiconductor
|
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE
|
Continental Device India Limited
|
| CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
